The reaction rate was controlled by product layer diffusion, except in the initial stage. 除了初始阶段外，反应速率是由产物层扩散所控制。
The variation of product layer diffusivity with these factors was explained by its dependence on the concentrations of defects in CaO and CaSO4 crystals. 产物层扩散系数的变化可以其受氧化钙及硫酸钙结晶缺陷的浓度的影响来解释。
